Specification	IR2136JTRPBF

Channel Type	3-Phase
Current - Peak Output (Sink)	0.35 A
Current - Peak Output (Source)	200 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	50 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Inverting
Logic Voltage - VIH	3 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	6
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Leads	32 Leads
Package Length	16.58 mm
Package Name	44-LCC (J-Lead), 32 Leads
Package Width	16.58 mm
Rise Time (Typ)	125 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2136 Series

Part	Gate Type	Logic Voltage - VIL	Logic Voltage - VIH	Package Width	Package Name	Package Length	Number of Drivers	High Side Voltage - Max (Bootstrap)	Channel Type	Operating Temperature (Min)	Operating Temperature (Max)	Current - Peak Output (Source)	Current - Peak Output (Sink)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Input Type	Gate Channel	Driven Configuration	Fall Time (Typ)	Rise Time (Typ)	Mounting Type	Package Leads
INFINEON IR2136S	IGBT MOSFET N-Channel MOSFET	0.8 V	3 V	7.5 mm	28-SOIC	0.295 in	6	600 V	3-Phase	-40 °C	150 °C	200 mA	0.35 A	10 VDC	20 V	Inverting	N-Channel	Half-Bridge	50 ns	125 ns	Surface Mount
INFINEON IR2136JTR	IGBT MOSFET N-Channel MOSFET	0.8 V	3 V	16.58 mm	32 Leads 44-LCC (J-Lead)	16.58 mm	6	600 V	3-Phase	-40 °C	150 °C	200 mA	0.35 A	10 VDC	20 V	Inverting	N-Channel	Half-Bridge	50 ns	125 ns	Surface Mount	32 Leads
INFINEON IR2136STR	IGBT MOSFET N-Channel MOSFET	0.8 V	3 V	7.5 mm	28-SOIC	0.295 in	6	600 V	3-Phase	-40 °C	150 °C	200 mA	0.35 A	10 VDC	20 V	Inverting	N-Channel	Half-Bridge	50 ns	125 ns	Surface Mount
INFINEON IR2136PBF	IGBT MOSFET N-Channel MOSFET	0.8 V	3 V	15.24 mm	28-DIP 28-PDIP	0.6 in	6	600 V	3-Phase	-40 °C	150 °C	200 mA	0.35 A	10 VDC	20 V	Inverting	N-Channel	Half-Bridge	50 ns	125 ns	Through Hole
INFINEON IR2136	IGBT MOSFET N-Channel MOSFET	0.8 V	3 V	15.24 mm	28-DIP 28-PDIP	0.6 in	6	600 V	3-Phase	-40 °C	150 °C	200 mA	0.35 A	10 VDC	20 V	Inverting	N-Channel	Half-Bridge	50 ns	125 ns	Through Hole
INFINEON IR2136JTRPBF
INFINEON IR2136SPBF	IGBT MOSFET N-Channel MOSFET	0.8 V	3 V	7.5 mm	28-SOIC	0.295 in	6	600 V	3-Phase	-40 °C	150 °C	200 mA	0.35 A	10 VDC	20 V	Inverting	N-Channel	Half-Bridge	50 ns	125 ns	Surface Mount
INFINEON IR2136J	IGBT MOSFET N-Channel MOSFET	0.8 V	3 V	16.58 mm	32 Leads 44-LCC (J-Lead)	16.58 mm	6	600 V	3-Phase	-40 °C	150 °C	200 mA	0.35 A	10 VDC	20 V	Inverting	N-Channel	Half-Bridge	50 ns	125 ns	Surface Mount	32 Leads
INFINEON IR2136JTRPBF	IGBT MOSFET N-Channel MOSFET	0.8 V	3 V	16.58 mm	32 Leads 44-LCC (J-Lead)	16.58 mm	6	600 V	3-Phase	-40 °C	150 °C	200 mA	0.35 A	10 VDC	20 V	Inverting	N-Channel	Half-Bridge	50 ns	125 ns	Surface Mount	32 Leads
INFINEON IR2136STRPBF	IGBT MOSFET N-Channel MOSFET	0.8 V	3 V	7.5 mm	28-SOIC	0.295 in	6	600 V	3-Phase	-40 °C	150 °C	200 mA	0.35 A	10 VDC	20 V	Inverting	N-Channel	Half-Bridge	50 ns	125 ns	Surface Mount

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