IR2136 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 28SOIC
| Part | Gate Type | Logic Voltage - VIL | Logic Voltage - VIH | Package Width | Package Name | Package Length | Number of Drivers | High Side Voltage - Max (Bootstrap) | Channel Type | Operating Temperature (Min) | Operating Temperature (Max) | Current - Peak Output (Source) | Current - Peak Output (Sink) | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Input Type | Gate Channel | Driven Configuration | Fall Time (Typ) | Rise Time (Typ) | Mounting Type | Package Leads |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET N-Channel MOSFET | 0.8 V | 3 V | 7.5 mm | 28-SOIC | 0.295 in | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 200 mA | 0.35 A | 10 VDC | 20 V | Inverting | N-Channel | Half-Bridge | 50 ns | 125 ns | Surface Mount | |
INFINEON | IGBT MOSFET N-Channel MOSFET | 0.8 V | 3 V | 16.58 mm | 32 Leads 44-LCC (J-Lead) | 16.58 mm | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 200 mA | 0.35 A | 10 VDC | 20 V | Inverting | N-Channel | Half-Bridge | 50 ns | 125 ns | Surface Mount | 32 Leads |
INFINEON | IGBT MOSFET N-Channel MOSFET | 0.8 V | 3 V | 7.5 mm | 28-SOIC | 0.295 in | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 200 mA | 0.35 A | 10 VDC | 20 V | Inverting | N-Channel | Half-Bridge | 50 ns | 125 ns | Surface Mount | |
INFINEON | IGBT MOSFET N-Channel MOSFET | 0.8 V | 3 V | 15.24 mm | 28-DIP 28-PDIP | 0.6 in | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 200 mA | 0.35 A | 10 VDC | 20 V | Inverting | N-Channel | Half-Bridge | 50 ns | 125 ns | Through Hole | |
INFINEON | IGBT MOSFET N-Channel MOSFET | 0.8 V | 3 V | 15.24 mm | 28-DIP 28-PDIP | 0.6 in | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 200 mA | 0.35 A | 10 VDC | 20 V | Inverting | N-Channel | Half-Bridge | 50 ns | 125 ns | Through Hole | |
INFINEON | ||||||||||||||||||||||
INFINEON | IGBT MOSFET N-Channel MOSFET | 0.8 V | 3 V | 7.5 mm | 28-SOIC | 0.295 in | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 200 mA | 0.35 A | 10 VDC | 20 V | Inverting | N-Channel | Half-Bridge | 50 ns | 125 ns | Surface Mount | |
INFINEON | IGBT MOSFET N-Channel MOSFET | 0.8 V | 3 V | 16.58 mm | 32 Leads 44-LCC (J-Lead) | 16.58 mm | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 200 mA | 0.35 A | 10 VDC | 20 V | Inverting | N-Channel | Half-Bridge | 50 ns | 125 ns | Surface Mount | 32 Leads |
INFINEON | IGBT MOSFET N-Channel MOSFET | 0.8 V | 3 V | 16.58 mm | 32 Leads 44-LCC (J-Lead) | 16.58 mm | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 200 mA | 0.35 A | 10 VDC | 20 V | Inverting | N-Channel | Half-Bridge | 50 ns | 125 ns | Surface Mount | 32 Leads |
INFINEON | IGBT MOSFET N-Channel MOSFET | 0.8 V | 3 V | 7.5 mm | 28-SOIC | 0.295 in | 6 | 600 V | 3-Phase | -40 °C | 150 °C | 200 mA | 0.35 A | 10 VDC | 20 V | Inverting | N-Channel | Half-Bridge | 50 ns | 125 ns | Surface Mount |