SPP11N60S5HKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 11A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 650V 11A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPP11N60S5HKSA1

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds	1460 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies SPP11N60S5HKSA1	-55 °C	150 °C	N-Channel	650 V	125 W	TO-220-3	20 V	Through Hole	5.5 V	54 nC	MOSFET (Metal Oxide)	10 V	380 mOhm	11 A	PG-TO220-3-1	1460 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 11A (Tc) 125W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources