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MOSFET N-CH 650V 11A TO220-3
| Part | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Package / Case | Vgs (Max) | Mounting Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Technology | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 150 °C | N-Channel | 650 V | 125 W | TO-220-3 | 20 V | Through Hole | 5.5 V | 54 nC | MOSFET (Metal Oxide) | 10 V | 380 mOhm | 11 A | PG-TO220-3-1 | 1460 pF |