SPP03N60C3HKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 3.2A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 650V 3.2A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPP03N60C3HKSA1

Current - Continuous Drain (Id) @ 25°C	3.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	38 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies SPP03N60C3HKSA1	650 V	Through Hole	10 V	3.9 V	N-Channel	38 W	PG-TO220-3-1	17 nC	3.2 A	1.4 Ohm	-55 °C	150 °C	MOSFET (Metal Oxide)	TO-220-3	20 V	400 pF
Infineon Technologies SPP03N60S5XKSA1	600 V	Through Hole	10 V		N-Channel	38 W	PG-TO220-3-1		3.2 A	1.4 Ohm	-55 °C	150 °C	MOSFET (Metal Oxide)	TO-220-3	20 V		16 nC	5.5 V	420 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 3.2A (Tc) 38W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources

No documents available