SPP03N Series

Catalog

MOSFET N-CH 650V 3.2A TO220-3

Part	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies SPP03N60C3HKSA1	650 V	Through Hole	10 V	3.9 V	N-Channel	38 W	PG-TO220-3-1	17 nC	3.2 A	1.4 Ohm	-55 °C	150 °C	MOSFET (Metal Oxide)	TO-220-3	20 V	400 pF
Infineon Technologies SPP03N60S5XKSA1	600 V	Through Hole	10 V		N-Channel	38 W	PG-TO220-3-1		3.2 A	1.4 Ohm	-55 °C	150 °C	MOSFET (Metal Oxide)	TO-220-3	20 V		16 nC	5.5 V	420 pF