CSD25402Q3AT
Active-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 8.9 MOHM
CSD25402Q3AT
Active-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 8.9 MOHM
Description
General part information
CSD25402Q3A Series
This -20-V, 7.7-mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.
This -20-V, 7.7-mΩ NexFET power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD25402Q3AT |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 15 A |
| Current - Continuous Drain (Id) (Tc) | 76 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 9.7 nC |
| Input Capacitance (Ciss) (Max) | 1790 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 3 mm |
| Package Name | 8-VSONP |
| Package Width | 3.3 mm |
| Power Dissipation (Max) | 2.8 W, 69 W |
| Rds On (Max) | 8.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) | 1.15 V |
Pricing
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