IRFD110

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Harris Corporation

1A, 100V, 0.600 OHM, N-CHANNEL

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Active

Harris Corporation

1A, 100V, 0.600 OHM, N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	IRFD110

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.3 nC
Input Capacitance (Ciss) (Max) @ Vds	180 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	4-DIP (0.300", 7.62mm)
Power Dissipation (Max)	1.3 W
Rds On (Max) @ Id, Vgs	540 mOhm
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

1A, 100V, 0.600 OHM, N-CHANNEL

Part	Technology	FET Type	Package / Case	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)
Harris Corporation IRFD110	MOSFET (Metal Oxide)	N-Channel	4-DIP (0.300", 7.62mm)	1.3 W	4-DIP, Hexdip, HVMDIP	4 V	10 V	-55 °C	175 ░C	1 A	540 mOhm	180 pF	Through Hole	8.3 nC	100 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	523	$ 0.57

General part information

N-Channel 100 V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

Technical documentation and resources

No documents available