1A, 100V, 0.600 OHM, N-CHANNEL
| Part | Technology | FET Type | Package / Case | Power Dissipation (Max) | Supplier Device Package | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Harris Corporation IRFD110 | MOSFET (Metal Oxide) | N-Channel | 4-DIP (0.300", 7.62mm) | 1.3 W | 4-DIP, Hexdip, HVMDIP | 4 V | 10 V | -55 °C | 175 ░C | 1 A | 540 mOhm | 180 pF | Through Hole | 8.3 nC | 100 V | 20 V |