CD74HC03M
ActiveTexas Instruments
4-CH, 2-INPUT, 2-V TO 6-V 5.2 MA DRIVE STRENGTH NAND GATE WITH OPEN-DRAIN OUTPUTS
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CD74HC03M
ActiveTexas Instruments
4-CH, 2-INPUT, 2-V TO 6-V 5.2 MA DRIVE STRENGTH NAND GATE WITH OPEN-DRAIN OUTPUTS
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | CD74HC03M | CD74HC03 Series |
|---|---|---|
| Current - Output High, Low | 5.2 mA | 5.2 mA |
| Current - Output High, Low | - | - |
| Features | Open Drain | Open Drain |
| Input Logic Level - High [Max] | 4.2 V | 4.2 V |
| Input Logic Level - High [Min] | 1.5 V | 1.5 V |
| Input Logic Level - Low [Max] | 1.8 V | 1.8 V |
| Input Logic Level - Low [Min] | 0.5 V | 0.5 V |
| Logic Type | NAND Gate | NAND Gate |
| Max Propagation Delay @ V, Max CL | 17 ns | 17 ns |
| Mounting Type | Surface Mount | Surface Mount, Through Hole |
| Number of Circuits | 4 | 4 |
| Number of Inputs | 2 | 2 |
| Operating Temperature [Max] | 125 °C | 125 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | 3.9 mm | 3.9 - 7.62 mm |
| Package / Case | 0.154 in | 0.154 - 0.3 in |
| Package / Case | 14-SOIC | 14-SOIC, 14-DIP |
| Voltage - Supply [Max] | 6 V | 6 V |
| Voltage - Supply [Min] | 2 V | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
CD74HC03 Series
4-ch, 2-input, 2-V to 6-V 5.2 mA drive strength NAND gate with open-drain outputs
| Part | Input Logic Level - High [Max] | Input Logic Level - High [Min] | Features | Logic Type | Current - Output High, Low | Current - Output High, Low | Voltage - Supply [Min] | Voltage - Supply [Max] | Mounting Type | Number of Inputs | Operating Temperature [Min] | Operating Temperature [Max] | Number of Circuits | Max Propagation Delay @ V, Max CL | Input Logic Level - Low [Max] | Input Logic Level - Low [Min] | Package / Case | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CD74HC03MTThe ’HC03 and ’HCT03 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The HCT logic family is functionally as well as pin compatible with the standard LS logic family.
These open drain NAND gates can drive into resistive loads to output voltages as high as 10V. Minimum values of RLrequired versus load voltage are shown in Figure 2.
The ’HC03 and ’HCT03 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The HCT logic family is functionally as well as pin compatible with the standard LS logic family.
These open drain NAND gates can drive into resistive loads to output voltages as high as 10V. Minimum values of RLrequired versus load voltage are shown in Figure 2. | 4.2 V | 1.5 V | Open Drain | NAND Gate | 5.2 mA | - | 2 V | 6 V | Surface Mount | 2 | -55 °C | 125 °C | 4 | 17 ns | 1.8 V | 0.5 V | 3.9 mm | 0.154 in | 14-SOIC |
Texas Instruments CD74HC03EThe ’HC03 and ’HCT03 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The HCT logic family is functionally as well as pin compatible with the standard LS logic family.
These open drain NAND gates can drive into resistive loads to output voltages as high as 10V. Minimum values of RLrequired versus load voltage are shown in Figure 2.
The ’HC03 and ’HCT03 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The HCT logic family is functionally as well as pin compatible with the standard LS logic family.
These open drain NAND gates can drive into resistive loads to output voltages as high as 10V. Minimum values of RLrequired versus load voltage are shown in Figure 2. | 4.2 V | 1.5 V | Open Drain | NAND Gate | 5.2 mA | - | 2 V | 6 V | Through Hole | 2 | -55 °C | 125 °C | 4 | 17 ns | 1.8 V | 0.5 V | 7.62 mm | 0.3 in | 14-DIP |
Texas Instruments CD74HC03MThe ’HC03 and ’HCT03 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The HCT logic family is functionally as well as pin compatible with the standard LS logic family.
These open drain NAND gates can drive into resistive loads to output voltages as high as 10V. Minimum values of RLrequired versus load voltage are shown in Figure 2.
The ’HC03 and ’HCT03 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The HCT logic family is functionally as well as pin compatible with the standard LS logic family.
These open drain NAND gates can drive into resistive loads to output voltages as high as 10V. Minimum values of RLrequired versus load voltage are shown in Figure 2. | 4.2 V | 1.5 V | Open Drain | NAND Gate | 5.2 mA | - | 2 V | 6 V | Surface Mount | 2 | -55 °C | 125 °C | 4 | 17 ns | 1.8 V | 0.5 V | 3.9 mm | 0.154 in | 14-SOIC |
Texas Instruments CD74HC03M96The ’HC03 and ’HCT03 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The HCT logic family is functionally as well as pin compatible with the standard LS logic family.
These open drain NAND gates can drive into resistive loads to output voltages as high as 10V. Minimum values of RLrequired versus load voltage are shown in Figure 2.
The ’HC03 and ’HCT03 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The HCT logic family is functionally as well as pin compatible with the standard LS logic family.
These open drain NAND gates can drive into resistive loads to output voltages as high as 10V. Minimum values of RLrequired versus load voltage are shown in Figure 2. | 4.2 V | 1.5 V | Open Drain | NAND Gate | 5.2 mA | - | 2 V | 6 V | Surface Mount | 2 | -55 °C | 125 °C | 4 | 17 ns | 1.8 V | 0.5 V | 3.9 mm | 0.154 in | 14-SOIC |
Description
General part information
CD74HC03 Series
The ’HC03 and ’HCT03 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The HCT logic family is functionally as well as pin compatible with the standard LS logic family.
These open drain NAND gates can drive into resistive loads to output voltages as high as 10V. Minimum values of RLrequired versus load voltage are shown in Figure 2.
The ’HC03 and ’HCT03 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The HCT logic family is functionally as well as pin compatible with the standard LS logic family.
Documents
Technical documentation and resources