SSM6N55NU,LF

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6N55NU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	280 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	46 mOhm
Supplier Device Package	6-µDFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Feature	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Mounting Type	Technology	Operating Temperature	Configuration	Supplier Device Package	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage SSM6N55NU,LF	30 V	2.5 V	Logic Level Gate	4 A	280 pF	1 W	Surface Mount	MOSFET (Metal Oxide)	150 °C	2 N-Channel (Dual)	6-µDFN (2x2)	46 mOhm

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General part information

Mosfet Array 30V 4A 1W Surface Mount 6-µDFN (2x2)

Technical documentation and resources

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