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MOSFET 2N-CH 30V 4A 6DFN
| Part | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | FET Feature | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Power - Max [Max] | Mounting Type | Technology | Operating Temperature | Configuration | Supplier Device Package | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 30 V | 2.5 V | Logic Level Gate | 4 A | 280 pF | 1 W | Surface Mount | MOSFET (Metal Oxide) | 150 °C | 2 N-Channel (Dual) | 6-µDFN (2x2) | 46 mOhm |