TSM85N10CZ C0G

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 100V 81A TO220

Search across all available documentation for this part.

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 100V 81A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	TSM85N10CZ C0G

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	154 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	210 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Package / Case	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Taiwan Semiconductor Corporation TSM85N10CZ C0G	10 V	4 V	N-Channel	154 nC	210 W	TO-220-3	Through Hole	MOSFET (Metal Oxide)	3900 pF	20 V	TO-220	10 mOhm	-55 °C	150 °C	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 81A (Tc) 210W (Tc) Through Hole TO-220

Technical documentation and resources

No documents available