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MOSFET N-CHANNEL 100V 81A TO220
| Part | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | FET Type | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Package / Case | Mounting Type | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 10 V | 4 V | N-Channel | 154 nC | 210 W | TO-220-3 | Through Hole | MOSFET (Metal Oxide) | 3900 pF | 20 V | TO-220 | 10 mOhm | -55 °C | 150 °C | 100 V |