IPA80R1K4CEXKSA1

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Infineon Technologies

MOSFET N-CH 800V 2.8A TO220

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Infineon Technologies

MOSFET N-CH 800V 2.8A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IPA80R1K4CEXKSA1

Current - Continuous Drain (Id) @ 25°C	2.8 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	570 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs [Max]	1.4 Ohm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IPA80R460CEXKSA1	3.9 V	150 °C	-40 °C	TO-220-3 Full Pack	460 mOhm	5 A	20 V	34 W	PG-TO220-FP	10 V	Through Hole	64 nC	N-Channel	800 V	1600 pF	MOSFET (Metal Oxide)
Infineon Technologies IPA80R1K4CEXKSA1	3.9 V	150 °C	-40 °C	TO-220-3 Full Pack		2.8 A	20 V	31 W	PG-TO220-FP	10 V	Through Hole		N-Channel	800 V	570 pF	MOSFET (Metal Oxide)	23 nC	1.4 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 2.8A (Tc) 31W (Tc) Through Hole PG-TO220-FP

Technical documentation and resources