MOSFET N-CH 800V 5A TO220
| Part | Vgs(th) (Max) @ Id | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Power Dissipation (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Technology | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3.9 V | 150 °C | -40 °C | TO-220-3 Full Pack | 460 mOhm | 5 A | 20 V | 34 W | PG-TO220-FP | 10 V | Through Hole | 64 nC | N-Channel | 800 V | 1600 pF | MOSFET (Metal Oxide) | ||
Infineon Technologies | 3.9 V | 150 °C | -40 °C | TO-220-3 Full Pack | 2.8 A | 20 V | 31 W | PG-TO220-FP | 10 V | Through Hole | N-Channel | 800 V | 570 pF | MOSFET (Metal Oxide) | 23 nC | 1.4 Ohm |