AS3D030065C

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ANBON SEMICONDUCTOR (INT'L) LIMITED

650V,30A SILICON CARBIDE SCHOTTK

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ANBON SEMICONDUCTOR (INT'L) LIMITED

650V,30A SILICON CARBIDE SCHOTTK

Technical Specifications

Parameters and characteristics for this part

Specification	AS3D030065C

Capacitance @ Vr, F	1805 pF
Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

650V,30A SILICON CARBIDE SCHOTTK

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Technology	Speed	Supplier Device Package	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If
ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D030065C	TO-247-2	650 V	Through Hole	175 ░C	-55 C	20 µA	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-2	0 ns	35 A	1805 pF	1.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 35A Through Hole TO-247-2

Technical documentation and resources