650V,30A SILICON CARBIDE SCHOTTK
| Part | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Technology | Speed | Supplier Device Package | Reverse Recovery Time (trr) | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ANBON SEMICONDUCTOR (INT'L) LIMITED AS3D030065C | TO-247-2 | 650 V | Through Hole | 175 ░C | -55 C | 20 µA | SiC (Silicon Carbide) Schottky | No Recovery Time | TO-247-2 | 0 ns | 35 A | 1805 pF | 1.8 V |