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2N6301 - TO-66 Package Style

2N6301

Active
Microchip Technology

POWER BJT TO-66 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

2N6301 - TO-66 Package Style

2N6301

Active
Microchip Technology

POWER BJT TO-66 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N6301
Current - Collector (Ic) (Max) [Max]8 A
Current - Collector Cutoff (Max) [Max]500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]750
Mounting TypeThrough Hole
Operating Temperature [Max]200 C
Operating Temperature [Min]-55 °C
Package / CaseTO-66-2, TO-213AA
Power - Max [Max]75 W
Supplier Device PackageTO-66 (TO-213AA)
Vce Saturation (Max) @ Ib, Ic3 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 28.68
100$ 26.64
Microchip DirectN/A 1$ 28.67
NewarkEach 100$ 26.62
500$ 25.60

2N6301-Darlington Series

MIL-PRF-19500/539

PartDC Current Gain (hFE) (Min) @ Ic, Vce [Min]Package / CaseCurrent - Collector (Ic) (Max) [Max]Power - Max [Max]Voltage - Collector Emitter Breakdown (Max) [Max]Vce Saturation (Max) @ Ib, IcSupplier Device PackageOperating Temperature [Min]Operating Temperature [Max]Mounting TypeCurrent - Collector Cutoff (Max) [Max]
Microchip Technology
2N6301
750
TO-213AA, TO-66-2
8 A
75 W
80 V
3 V
TO-66 (TO-213AA)
-55 °C
200 C
Through Hole
500 çA

Description

General part information

2N6301-Darlington Series

This specification covers the performance requirements for NPN silicon power Darlington, 2N6300 and 2N6301 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500/539. The device package outlines are as follows: TO-213AA (formerly TO-66) for all encapsulated device types.

Documents

Technical documentation and resources