2N6301-Darlington Series

MIL-PRF-19500/539

Catalog

MIL-PRF-19500/539

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]
Microchip Technology 2N6301	750	TO-213AA, TO-66-2	8 A	75 W	80 V	3 V	TO-66 (TO-213AA)	-55 °C	200 C	Through Hole	500 çA

Catalog

MIL-PRF-19500/539

Key Features

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Description

This specification covers the performance requirements for NPN silicon power Darlington, 2N6300 and 2N6301 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500/539. The device package outlines are as follows: TO-213AA (formerly TO-66) for all encapsulated device types.