STU10NM65N

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STMicroelectronics

MOSFET N-CH 650V 9A IPAK

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STMicroelectronics

MOSFET N-CH 650V 9A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU10NM65N

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	850 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	480 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 650V 9A IPAK

Part	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Technology	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
STMicroelectronics STU10NM65N	150 °C	850 pF	N-Channel	25 nC	4 V	IPAK	9 A	25 V	IPAK, TO-251-3 Short Leads, TO-251AA	MOSFET (Metal Oxide)	Through Hole	90 W	10 V	650 V	480 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 9A (Tc) 90W (Tc) Through Hole IPAK

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