MOSFET N-CH 650V 9A IPAK
| Part | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Package / Case | Technology | Mounting Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STU10NM65N | 150 °C | 850 pF | N-Channel | 25 nC | 4 V | IPAK | 9 A | 25 V | IPAK, TO-251-3 Short Leads, TO-251AA | MOSFET (Metal Oxide) | Through Hole | 90 W | 10 V | 650 V | 480 mOhm |