
CD74HCT10M96
Active3-CH, 3-INPUT, 4.5-V TO 5.5-V NAND GATES WITH TTL-COMPATIBLE CMOS INPUTS
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CD74HCT10M96
Active3-CH, 3-INPUT, 4.5-V TO 5.5-V NAND GATES WITH TTL-COMPATIBLE CMOS INPUTS
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Technical Specifications
Parameters and characteristics commom to parts in this series
Specification | CD74HCT10M96 | 74HCT10 Series |
---|---|---|
Current - Output High, Low | 4 mA, 4 mA | 4 mA |
Input Logic Level - Low | 0.8 V | 0.8 V |
Logic Type | NAND Gate | NAND Gate |
Max Propagation Delay @ V, Max CL | 24 ns | 24 ns |
Mounting Type | Surface Mount | Surface Mount, Through Hole |
Number of Circuits | 3 | 3 |
Number of Inputs | 3 | 3 |
Operating Temperature [Max] | 125 °C | 125 °C |
Operating Temperature [Min] | -55 °C | -55 °C |
Package / Case | 3.9 mm | 3.9 - 7.62 mm |
Package / Case | 0.154 in | 0.154 - 0.3 in |
Package / Case | 14-SOIC | 14-SOIC, 14-DIP |
Voltage - Supply [Max] | 5.5 V | 5.5 V |
Voltage - Supply [Min] | 4.5 V | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
74HCT10 Series
3-ch, 3-input, 4.5-V to 5.5-V NAND gates with TTL-compatible CMOS inputs
Part | Logic Type | Current - Output High, Low | Number of Circuits | Voltage - Supply [Max] | Voltage - Supply [Min] | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Number of Inputs | Max Propagation Delay @ V, Max CL | Package / Case | Package / Case | Package / Case | Input Logic Level - Low |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NAND Gate | 4 mA, 4 mA | 3 | 5.5 V | 4.5 V | Surface Mount | -55 °C | 125 °C | 3 | 24 ns | 3.9 mm | 0.154 in | 14-SOIC | 0.8 V | |
Texas Instruments CD74HCT10EThis device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic.
This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic. | NAND Gate | 4 mA, 4 mA | 3 | 5.5 V | 4.5 V | Through Hole | -55 °C | 125 °C | 3 | 24 ns | 7.62 mm | 0.3 in | 14-DIP | 0.8 V |
Texas Instruments CD74HCT10MTThis device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic.
This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic. | NAND Gate | 4 mA, 4 mA | 3 | 5.5 V | 4.5 V | Surface Mount | -55 °C | 125 °C | 3 | 24 ns | 3.9 mm | 0.154 in | 14-SOIC | 0.8 V |
Texas Instruments CD74HCT10MThis device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic.
This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic. | NAND Gate | 4 mA, 4 mA | 3 | 5.5 V | 4.5 V | Surface Mount | -55 °C | 125 °C | 3 | 24 ns | 3.9 mm | 0.154 in | 14-SOIC | 0.8 V |
Texas Instruments CD74HCT10M96This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic.
This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic. | NAND Gate | 4 mA, 4 mA | 3 | 5.5 V | 4.5 V | Surface Mount | -55 °C | 125 °C | 3 | 24 ns | 3.9 mm | 0.154 in | 14-SOIC | 0.8 V |
Description
General part information
74HCT10 Series
This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic.
This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic.
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Technical documentation and resources