Zenode.ai Logo
CD74HCT10M96 - https://ti.com/content/dam/ticom/images/products/package/d/d0014a.png

CD74HCT10M96

Active
Texas Instruments

3-CH, 3-INPUT, 4.5-V TO 5.5-V NAND GATES WITH TTL-COMPATIBLE CMOS INPUTS

Deep-Dive with AI

Search across all available documentation for this part.

CD74HCT10M96 - https://ti.com/content/dam/ticom/images/products/package/d/d0014a.png

CD74HCT10M96

Active
Texas Instruments

3-CH, 3-INPUT, 4.5-V TO 5.5-V NAND GATES WITH TTL-COMPATIBLE CMOS INPUTS

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationCD74HCT10M9674HCT10 Series
Current - Output High, Low4 mA, 4 mA4 mA
Input Logic Level - Low0.8 V0.8 V
Logic TypeNAND GateNAND Gate
Max Propagation Delay @ V, Max CL24 ns24 ns
Mounting TypeSurface MountSurface Mount, Through Hole
Number of Circuits33
Number of Inputs33
Operating Temperature [Max]125 °C125 °C
Operating Temperature [Min]-55 °C-55 °C
Package / Case3.9 mm3.9 - 7.62 mm
Package / Case0.154 in0.154 - 0.3 in
Package / Case14-SOIC14-SOIC, 14-DIP
Voltage - Supply [Max]5.5 V5.5 V
Voltage - Supply [Min]4.5 V4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

74HCT10 Series

3-ch, 3-input, 4.5-V to 5.5-V NAND gates with TTL-compatible CMOS inputs

PartLogic TypeCurrent - Output High, LowNumber of CircuitsVoltage - Supply [Max]Voltage - Supply [Min]Mounting TypeOperating Temperature [Min]Operating Temperature [Max]Number of InputsMax Propagation Delay @ V, Max CLPackage / CasePackage / CasePackage / CaseInput Logic Level - Low
Texas Instruments
CD74HCT10M96G4
NAND Gate IC 3 Channel 14-SOIC
NAND Gate
4 mA, 4 mA
3
5.5 V
4.5 V
Surface Mount
-55 °C
125 °C
3
24 ns
3.9 mm
0.154 in
14-SOIC
0.8 V
Texas Instruments
CD74HCT10E
This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic. This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic.
NAND Gate
4 mA, 4 mA
3
5.5 V
4.5 V
Through Hole
-55 °C
125 °C
3
24 ns
7.62 mm
0.3 in
14-DIP
0.8 V
Texas Instruments
CD74HCT10MT
This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic. This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic.
NAND Gate
4 mA, 4 mA
3
5.5 V
4.5 V
Surface Mount
-55 °C
125 °C
3
24 ns
3.9 mm
0.154 in
14-SOIC
0.8 V
Texas Instruments
CD74HCT10M
This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic. This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic.
NAND Gate
4 mA, 4 mA
3
5.5 V
4.5 V
Surface Mount
-55 °C
125 °C
3
24 ns
3.9 mm
0.154 in
14-SOIC
0.8 V
Texas Instruments
CD74HCT10M96
This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic. This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic.
NAND Gate
4 mA, 4 mA
3
5.5 V
4.5 V
Surface Mount
-55 °C
125 °C
3
24 ns
3.9 mm
0.154 in
14-SOIC
0.8 V

Description

General part information

74HCT10 Series

This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic.

This device contains three independent 3-input NAND gates. Each gate performs the Boolean function Y =A ● B ● Cin positive logic.