IRF7402PBF

Obsolete

Infineon Technologies

MOSFET N-CH 20V 6.8A 8SO

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Obsolete

Infineon Technologies

MOSFET N-CH 20V 6.8A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7402PBF

Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.7 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22 nC
Input Capacitance (Ciss) (Max) @ Vds	650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	700 mV

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Infineon Technologies IRF7402PBF	22 nC	-55 °C	150 °C	Surface Mount	12 V	650 pF	2.5 W	4.5 V	2.7 V	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	8-SO	35 mOhm	N-Channel	20 V	700 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 6.8A (Ta) 2.5W (Ta) Surface Mount 8-SO

Technical documentation and resources