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MOSFET N-CH 20V 6.8A 8SO
| Part | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Rds On (Max) @ Id, Vgs | FET Type | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 22 nC | -55 °C | 150 °C | Surface Mount | 12 V | 650 pF | 2.5 W | 4.5 V | 2.7 V | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 8-SO | 35 mOhm | N-Channel | 20 V | 700 mV |