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RN1701JE(TE85L,F) - SOT-553

RN1701JE(TE85L,F)

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Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ESV

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RN1701JE(TE85L,F) - SOT-553

RN1701JE(TE85L,F)

Active
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ESV

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationRN1701JE(TE85L,F)
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]30
Frequency - Transition250 MHz
Mounting TypeSurface Mount
Package / CaseSOT-553
Power - Max [Max]100 mW
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4700 Ohms
Supplier Device PackageESV
Transistor Type2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.38
10$ 0.23
100$ 0.14
500$ 0.11
1000$ 0.10
2000$ 0.09
Digi-Reel® 1$ 0.38
10$ 0.23
100$ 0.14
500$ 0.11
1000$ 0.10
2000$ 0.09
Tape & Reel (TR) 4000$ 0.06
8000$ 0.05

Description

General part information

RN1701 Series

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV

Documents

Technical documentation and resources