RN1701 Series

Catalog

NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K

Part	Power - Max [Max]	Resistor - Emitter Base (R2)	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Resistor - Base (R1)	Mounting Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Frequency - Transition	Transistor Type
Toshiba Semiconductor and Storage RN1701,LF	200 mW	4700 Ohms	300 mV	100 mA	4.7 kOhms	Surface Mount	5-TSSOP SC-70-5 SOT-353	30	50 V	500 nA	USV	250 MHz	2 NPN - Pre-Biased (Dual)
Toshiba Semiconductor and Storage RN1701JE(TE85L,F)	100 mW	4700 Ohms	300 mV	100 mA	4.7 kOhms	Surface Mount	SOT-553	30	50 V	100 nA	ESV	250 MHz	2 NPN - Pre-Biased (Dual) (Emitter Coupled)