TJ40S04M3L,LXHQ

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Toshiba Semiconductor and Storage

MOSFET P-CH 40V 40A DPAK

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Toshiba Semiconductor and Storage

MOSFET P-CH 40V 40A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TJ40S04M3L,LXHQ

Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	83 nC
Input Capacitance (Ciss) (Max) @ Vds	4140 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	9.1 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	3 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Min]	Vgs (Max) [Max]	Mounting Type	FET Type	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
Toshiba Semiconductor and Storage TJ40S04M3L(T6L1,NQ	40 V	4140 pF	-20 V	10 V	Surface Mount	P-Channel	68 W	MOSFET (Metal Oxide)	6 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	9.1 mOhm	175 °C	DPAK+	40 A	3 V	83 nC
Toshiba Semiconductor and Storage TJ40S04M3L,LXHQ	40 V	4140 pF	-20 V	10 V	Surface Mount	P-Channel	68 W	MOSFET (Metal Oxide)	6 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	9.1 mOhm	175 °C	DPAK+	40 A	3 V	83 nC

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General part information

P-Channel 40 V 40A (Ta) 68W (Tc) Surface Mount DPAK+

Technical documentation and resources