MOSFET P-CH 40V 40A DPAK
| Part | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) [Min] | Vgs (Max) [Max] | Mounting Type | FET Type | Power Dissipation (Max) | Technology | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Rds On (Max) @ Id, Vgs | Operating Temperature | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 40 V | 4140 pF | -20 V | 10 V | Surface Mount | P-Channel | 68 W | MOSFET (Metal Oxide) | 6 V 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 9.1 mOhm | 175 °C | DPAK+ | 40 A | 3 V | 83 nC |
Toshiba Semiconductor and Storage | 40 V | 4140 pF | -20 V | 10 V | Surface Mount | P-Channel | 68 W | MOSFET (Metal Oxide) | 6 V 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 9.1 mOhm | 175 °C | DPAK+ | 40 A | 3 V | 83 nC |