IXFT15N100Q3

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IXYS

MOSFET N-CH 1000V 15A TO268

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IXYS

MOSFET N-CH 1000V 15A TO268

Technical Specifications

Parameters and characteristics for this part

Specification	IXFT15N100Q3

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds	3250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268AA, TO-268-3
Power Dissipation (Max)	690 W
Rds On (Max) @ Id, Vgs	1.05 Ohm
Supplier Device Package	TO-268AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
IXYS IXFT15N100Q	360 W	Surface Mount	15 A	-55 °C	150 °C	TO-268AA	MOSFET (Metal Oxide)	10 V	4500 pF	700 mOhm	N-Channel	170 nC	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	20 V	1000 V	5 V
IXYS IXFT15N100Q3	690 W	Surface Mount	15 A	-55 °C	150 °C	TO-268AA	MOSFET (Metal Oxide)	10 V	3250 pF	1.05 Ohm	N-Channel	64 nC	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	30 V	1000 V	6.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1000 V 15A (Tc) 690W (Tc) Surface Mount TO-268AA

Technical documentation and resources