MOSFET N-CH 1000V 15A TO268
| Part | Power Dissipation (Max) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Technology | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Vgs (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 360 W | Surface Mount | 15 A | -55 °C | 150 °C | TO-268AA | MOSFET (Metal Oxide) | 10 V | 4500 pF | 700 mOhm | N-Channel | 170 nC | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 20 V | 1000 V | 5 V |
IXYS | 690 W | Surface Mount | 15 A | -55 °C | 150 °C | TO-268AA | MOSFET (Metal Oxide) | 10 V | 3250 pF | 1.05 Ohm | N-Channel | 64 nC | D3PAK (2 Leads + Tab) TO-268-3 TO-268AA | 30 V | 1000 V | 6.5 V |