STW68N60M6-4
ActiveN-CHANNEL 600 V, 35 MOHM TYP., 63 A MDMESH M6 POWER MOSFET IN A TO247-4 PACKAGE
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STW68N60M6-4
ActiveN-CHANNEL 600 V, 35 MOHM TYP., 63 A MDMESH M6 POWER MOSFET IN A TO247-4 PACKAGE
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | STW68N60M6-4 | STW68 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | 63 A | 63 - 72 A |
| Drain to Source Voltage (Vdss) | 600 V | 600 - 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V | 10 V |
| FET Type | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC | 106 nC |
| Gate Charge (Qg) (Max) @ Vgs | - | 118 nC |
| Grade | - | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 4360 pF | 4360 pF |
| Input Capacitance (Ciss) (Max) @ Vds | - | 5900 pF |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-247-4 | TO-247-4 |
| Power Dissipation (Max) | - | 480 W |
| Power Dissipation (Max) [Max] | 390 W | 390 W |
| Qualification | - | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 41 mOhm | 39 - 41 mOhm |
| Supplier Device Package | TO-247-4 | TO-247-4 |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V | 25 V |
| Vgs(th) (Max) @ Id | 4.75 V | 4.75 V |
STW68 Series
Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO247-4 package
| Part | FET Type | Current - Continuous Drain (Id) @ 25°C | Technology | Grade | Supplier Device Package | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Qualification | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Power Dissipation (Max) | Vgs (Max) | Package / Case | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STW68N65DM6-4AG | N-Channel | 72 A | MOSFET (Metal Oxide) | Automotive | TO-247-4 | 39 mOhm | 118 nC | 5900 pF | 650 V | AEC-Q101 | 4.75 V | -55 °C | 150 °C | Through Hole | 480 W | 25 V | TO-247-4 | ||||
STMicroelectronics STW68N60M6-4 | N-Channel | 63 A | MOSFET (Metal Oxide) | TO-247-4 | 41 mOhm | 600 V | 4.75 V | -55 °C | 150 °C | Through Hole | 25 V | TO-247-4 | 390 W | 4360 pF | 106 nC | 10 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 600 | $ 7.81 | |
Description
General part information
STW68 Series
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources