STW68N60M6-4

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STMicroelectronics

N-CHANNEL 600 V, 35 MOHM TYP., 63 A MDMESH M6 POWER MOSFET IN A TO247-4 PACKAGE

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STW68N60M6-4

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STMicroelectronics

N-CHANNEL 600 V, 35 MOHM TYP., 63 A MDMESH M6 POWER MOSFET IN A TO247-4 PACKAGE

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Distributor	Package	Quantity	$

Digikey	Tube	600	$ 7.81

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STW68 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

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Specification	STW68N60M6-4	STW68 Series

Current - Continuous Drain (Id) @ 25°C	63 A	63 - 72 A
Drain to Source Voltage (Vdss)	600 V	600 - 650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	106 nC	106 nC
Gate Charge (Qg) (Max) @ Vgs	-	118 nC
Grade	-	Automotive
Input Capacitance (Ciss) (Max) @ Vds	4360 pF	4360 pF
Input Capacitance (Ciss) (Max) @ Vds	-	5900 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-4	TO-247-4
Power Dissipation (Max)	-	480 W
Power Dissipation (Max) [Max]	390 W	390 W
Qualification	-	AEC-Q101
Rds On (Max) @ Id, Vgs	41 mOhm	39 - 41 mOhm
Supplier Device Package	TO-247-4	TO-247-4
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	25 V	25 V
Vgs(th) (Max) @ Id	4.75 V	4.75 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Grade	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Qualification	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Package / Case	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STW68N65DM6-4AG	N-Channel	72 A	MOSFET (Metal Oxide)	Automotive	TO-247-4	39 mOhm	118 nC	5900 pF	650 V	AEC-Q101	4.75 V	-55 °C	150 °C	Through Hole	480 W	25 V	TO-247-4
STMicroelectronics STW68N60M6-4	N-Channel	63 A	MOSFET (Metal Oxide)		TO-247-4	41 mOhm			600 V		4.75 V	-55 °C	150 °C	Through Hole		25 V	TO-247-4	390 W	4360 pF	106 nC	10 V

STW68N60M6-4

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STW68N60M6-4

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Description

STW68 Series

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STW68 Series