STW68N65DM6-4AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 33 MOHM TYP., 72 A MDMESH DM6 POWER MOSFET IN A TO247-4 PACKAGE

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STW68N65DM6-4AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 33 MOHM TYP., 72 A MDMESH DM6 POWER MOSFET IN A TO247-4 PACKAGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STW68N65DM6-4AG	STW68 Series

Current - Continuous Drain (Id) @ 25°C	72 A	63 - 72 A
Drain to Source Voltage (Vdss)	650 V	600 - 650 V
Drive Voltage (Max Rds On, Min Rds On)	-	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	-	106 nC
Gate Charge (Qg) (Max) @ Vgs [Max]	118 nC	118 nC
Grade	Automotive	Automotive
Input Capacitance (Ciss) (Max) @ Vds	-	4360 pF
Input Capacitance (Ciss) (Max) @ Vds [Max]	5900 pF	5900 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-4	TO-247-4
Power Dissipation (Max)	480 W	480 W
Power Dissipation (Max)	-	390 W
Qualification	AEC-Q101	AEC-Q101
Rds On (Max) @ Id, Vgs	39 mOhm	39 - 41 mOhm
Supplier Device Package	TO-247-4	TO-247-4
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	25 V	25 V
Vgs(th) (Max) @ Id	4.75 V	4.75 V

STW68 Series

Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO247-4 package

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Grade	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Qualification	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Package / Case	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STW68N65DM6-4AG	N-Channel	72 A	MOSFET (Metal Oxide)	Automotive	TO-247-4	39 mOhm	118 nC	5900 pF	650 V	AEC-Q101	4.75 V	-55 °C	150 °C	Through Hole	480 W	25 V	TO-247-4
STMicroelectronics STW68N60M6-4	N-Channel	63 A	MOSFET (Metal Oxide)		TO-247-4	41 mOhm			600 V		4.75 V	-55 °C	150 °C	Through Hole		25 V	TO-247-4	390 W	4360 pF	106 nC	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 10.02
		30	$ 7.11
		120	$ 6.98
Newark	Each	1	$ 13.31
		10	$ 12.01
		25	$ 10.96

Description

General part information

STW68 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources