Specification	RN2907(T5L,F,T)

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	80
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Package Name	US6
PNP Count	2
Power - Max	200 mW
Resistor - Base (R1) Resistance	10 kOhm
Resistor - Emitter Base (R2)	47 kOhm
Transistor Configuration	Pre-Biased, Dual
Transistor Type	PNP
Vce Saturation (Max)	300 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

RN2907 Series

Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 10 kΩ/47 kΩ, SOT-363(US6)

Part	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min)	Vce Saturation (Max)	Package Name	Current - Collector Cutoff (Max)	Mounting Type	Resistor - Emitter Base (R2)	Resistor - Base (R1) Resistance	Current - Collector (Ic) (Max)	Power - Max	Frequency - Transition	Package / Case	PNP Count	Transistor Type	Transistor Configuration
Toshiba Semiconductor and Storage RN2907,LF(CT	50 V	80	300 mV	US6	500 nA	Surface Mount	47 kOhm	10 kOhm	0.1 mA	200 mW	200 MHz	6-TSSOP SC-88 SOT-363	2	PNP	Dual Pre-Biased
Toshiba Semiconductor and Storage RN2907,LXHF(CT	50 V	80	300 mV	US6	500 nA	Surface Mount	47 kOhm	10 kOhm	0.1 mA	200 mW	200 MHz	6-TSSOP SC-88 SOT-363	2	PNP	Dual Pre-Biased
Toshiba Semiconductor and Storage RN2907(T5L,F,T)	50 V	80	300 mV	US6	100 nA	Surface Mount	47 kOhm	10 kOhm	0.1 mA	200 mW	200 MHz	6-TSSOP SC-88 SOT-363	2	PNP	Dual Pre-Biased

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