RN2907,LXHF(CT

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Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNPX2 BRT, Q1BSR=1

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Toshiba Semiconductor and Storage

AUTO AEC-Q TR PNPX2 BRT, Q1BSR=1

Technical Specifications

Parameters and characteristics for this part

Specification	RN2907,LXHF(CT

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	200 mW
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	US6
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case	Resistor - Emitter Base (R2)	Current - Collector Cutoff (Max) [Max]	Transistor Type	Mounting Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage RN2907,LF(CT	300 mV	80	200 MHz	50 V	US6	6-TSSOP SC-88 SOT-363	47000 Ohms	500 nA	2 PNP - Pre-Biased (Dual)	Surface Mount	200 mW	100 mA
Toshiba Semiconductor and Storage RN2907,LXHF(CT	300 mV	80	200 MHz	50 V	US6	6-TSSOP SC-88 SOT-363	47000 Ohms	500 nA	2 PNP - Pre-Biased (Dual)	Surface Mount	200 mW	100 mA
Toshiba Semiconductor and Storage RN2907(T5L,F,T)	300 mV	80	200 MHz	50 V	US6	6-TSSOP SC-88 SOT-363	47000 Ohms	100 nA	2 PNP - Pre-Biased (Dual)	Surface Mount	200 mW	100 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Technical documentation and resources