IPB034N06N3GATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 60V 100A TO263-7

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Obsolete

Infineon Technologies

MOSFET N-CH 60V 100A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	IPB034N06N3GATMA1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	130 nC
Input Capacitance (Ciss) (Max) @ Vds	11000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max)	167 W
Rds On (Max) @ Id, Vgs [Max]	3.4 mOhm
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Package / Case	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPB034N06N3GATMA1	4 V	100 A	3.4 mOhm	Surface Mount	D2PAK TO-263-7	167 W	MOSFET (Metal Oxide)	60 V	-55 °C	175 ░C	130 nC	PG-TO263-7	20 V	10 V	N-Channel	11000 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 100A (Tc) 167W (Tc) Surface Mount PG-TO263-7

Technical documentation and resources