MOSFET N-CH 60V 100A TO263-7
| Part | Vgs(th) (Max) @ Id [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Mounting Type | Package / Case | Power Dissipation (Max) | Technology | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4 V | 100 A | 3.4 mOhm | Surface Mount | D2PAK TO-263-7 | 167 W | MOSFET (Metal Oxide) | 60 V | -55 °C | 175 ░C | 130 nC | PG-TO263-7 | 20 V | 10 V | N-Channel | 11000 pF |