Specification	VS-4ESH02-M3/86A

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage	2 µA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-65 °C
Package / Case	TO-277, 3-PowerDFN
Package Name	TO-277A (SMPC)
Reverse Recovery Time (trr)	20 ns
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	200 V
Voltage - Forward (Vf) (Max)	930 mV

4ESH02 Series

Part	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Voltage - Forward (Vf) (Max)	Package Name	Current - Reverse Leakage	Package / Case	Mounting Type	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max)	Reverse Recovery Time (trr)	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Technology
Vishay General Semiconductor - Diodes Division VS-4ESH02-M3/87A	175 °C	-65 °C	930 mV	TO-277A (SMPC)	2 µA	3-PowerDFN TO-277	Surface Mount	4 A	200 V	25 ns	500 ns	200 mA	Standard
Vishay General Semiconductor - Diodes Division VS-4ESH02-M3/86A	175 °C	-65 °C	930 mV	TO-277A (SMPC)	2 µA	3-PowerDFN TO-277	Surface Mount	4 A	200 V	20 ns	500 ns	200 mA	Standard

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