4ESH02 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
DIODE GEN PURP 200V 4A TO277A
| Part | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Voltage - Forward (Vf) (Max) | Package Name | Current - Reverse Leakage | Package / Case | Mounting Type | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) | Reverse Recovery Time (trr) | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 175 °C | -65 °C | 930 mV | TO-277A (SMPC) | 2 µA | 3-PowerDFN TO-277 | Surface Mount | 4 A | 200 V | 25 ns | 500 ns | 200 mA | Standard |
Vishay General Semiconductor - Diodes Division | 175 °C | -65 °C | 930 mV | TO-277A (SMPC) | 2 µA | 3-PowerDFN TO-277 | Surface Mount | 4 A | 200 V | 20 ns | 500 ns | 200 mA | Standard |