Zenode.ai Logo
Log InSign Up
APT77N60BC6 - Microchip Technology-ARF463AP1G RF FETs Trans RF MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-247 Tube

APT77N60BC6

Active
Microchip Technology

TRANS MOSFET N-CH 600V 77A 3-PIN(3+TAB) TO-247 TUBE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsAPT53N60BC6, APT53N60SC6 MOSFET SUPERJUNCTION 600 V 53 A TO-247 DatasheetAPT47N60BC3G, APT47N60SC3G MOSFET SUPERJUNCTION 600 V 47 A TO-247 Datasheet+4
APT77N60BC6 - Microchip Technology-ARF463AP1G RF FETs Trans RF MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-247 Tube

APT77N60BC6

Active
Microchip Technology

TRANS MOSFET N-CH 600V 77A 3-PIN(3+TAB) TO-247 TUBE

Deep-Dive with AI

DocumentsAPT53N60BC6, APT53N60SC6 MOSFET SUPERJUNCTION 600 V 53 A TO-247 DatasheetAPT47N60BC3G, APT47N60SC3G MOSFET SUPERJUNCTION 600 V 47 A TO-247 Datasheet+4

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationAPT77N60BC6SUPERJUNCTION-600V Series
Current - Continuous Drain (Id) @ 25°C77 A30 - 77 A
Drain to Source Voltage (Vdss)600 V600 V
Drive Voltage (Max Rds On, Min Rds On)10 V10 V
FET TypeN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs260 nC88 - 308 nC
Gate Charge (Qg) (Max) @ Vgs-112 - 190 nC
Input Capacitance (Ciss) (Max) @ Vds13600 pF2267 - 13600 pF
Mounting TypeThrough HoleThrough Hole, Surface Mount
Operating Temperature [Max]150 °C150 °C
Operating Temperature [Min]-55 °C-55 °C
Package / CaseTO-247-3TO-247-3, D3PAK (2 Leads + Tab), TO-268AA, TO-268-3, TO-247-3 Variant, TO-264AA, TO-264-3
Power Dissipation (Max)481 W219 - 833 W
Power Dissipation (Max)-417 - 431 W
Rds On (Max) @ Id, Vgs41 mOhm41 - 125 mOhm
Rds On (Max) @ Id, Vgs-35 mOhm
Supplier Device PackageTO-247 [B]TO-247 [B], D3PAK, T-MAX™ [B2], TO-264 (L)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)20 V20 - 30 V
Vgs(th) (Max) @ Id2.96 mA, 3.6 V2.96 - 3.9 V

SUPERJUNCTION-600V Series

600V Superjunction MOSFET

PartFET TypeDrain to Source Voltage (Vdss)Mounting TypeVgs (Max)TechnologyPackage / CaseSupplier Device PackageInput Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max) [Max]Vgs(th) (Max) @ IdOperating Temperature [Min]Operating Temperature [Max]Rds On (Max) @ Id, VgsDrive Voltage (Max Rds On, Min Rds On)Current - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsGate Charge (Qg) (Max) @ Vgs [Max]Power Dissipation (Max)Rds On (Max) @ Id, Vgs [Max]
Microchip Technology
APT53N60BC6
N-Channel
600 V
Through Hole
20 V
MOSFET (Metal Oxide)
TO-247-3
TO-247 [B]
4020 pF
417 W
3.5 V
-55 °C
150 °C
70 mOhm
10 V
53 A
154 nC
Microchip Technology
APT60N60SCSG/TR
N-Channel
600 V
Surface Mount
30 V
MOSFET (Metal Oxide)
D3PAK (2 Leads + Tab), TO-268-3, TO-268AA
D3PAK
7200 pF
431 W
3.9 V
-55 °C
150 °C
45 mOhm
10 V
60 A
190 nC
Microchip Technology
APT38N60BC6
N-Channel
600 V
Through Hole
20 V
MOSFET (Metal Oxide)
TO-247-3
TO-247 [B]
2826 pF
3.5 V
-55 °C
150 °C
99 mOhm
10 V
38 A
112 nC
278 W
Microchip Technology
APT60N60BCSG
N-Channel
600 V
Through Hole
30 V
MOSFET (Metal Oxide)
TO-247-3
TO-247 [B]
7200 pF
431 W
3.9 V
-55 °C
150 °C
45 mOhm
10 V
60 A
190 nC
Microchip Technology
APT77N60SC6
N-Channel
600 V
Surface Mount
20 V
MOSFET (Metal Oxide)
D3PAK (2 Leads + Tab), TO-268-3, TO-268AA
D3PAK
13600 pF
2.96 mA, 3.6 V
-55 °C
150 °C
41 mOhm
10 V
77 A
260 nC
481 W
Microchip Technology
APT106N60B2C6
N-Channel
600 V
Through Hole
20 V
MOSFET (Metal Oxide)
TO-247-3 Variant
T-MAX™ [B2]
8390 pF
3.5 V
-55 °C
150 °C
10 V
308 nC
833 W
35 mOhm
Microchip Technology
APT47N60SC3G
N-Channel
600 V
Surface Mount
20 V
MOSFET (Metal Oxide)
D3PAK (2 Leads + Tab), TO-268-3, TO-268AA
D3PAK
7015 pF
417 W
3.9 V
-55 °C
150 °C
10 V
47 A
260 nC
Microchip Technology
APT77N60BC6
N-Channel
600 V
Through Hole
20 V
MOSFET (Metal Oxide)
TO-247-3
TO-247 [B]
13600 pF
2.96 mA, 3.6 V
-55 °C
150 °C
41 mOhm
10 V
77 A
260 nC
481 W
Microchip Technology
APT60N60SCSG
N-Channel
600 V
Surface Mount
30 V
MOSFET (Metal Oxide)
D3PAK (2 Leads + Tab), TO-268-3, TO-268AA
D3PAK
7200 pF
431 W
3.9 V
-55 °C
150 °C
45 mOhm
10 V
60 A
190 nC
Microchip Technology
APT106N60LC6
N-Channel
600 V
Through Hole
20 V
MOSFET (Metal Oxide)
TO-264-3, TO-264AA
TO-264 (L)
8390 pF
3.5 V
-55 °C
150 °C
10 V
308 nC
833 W
35 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 13.38
100$ 8.42
Microchip DirectTUBE 1$ 13.38
100$ 11.55
250$ 11.12
500$ 10.85
1000$ 10.60
5000$ 10.25

Description

General part information

SUPERJUNCTION-600V Series

A family of 600V Superjunction MOSFETs available in a variety of current and package options.