Specification	SSM3J140TU,LXHF

Current - Continuous Drain (Id) (Ta)	4.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	24.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1800 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-SMD, Flat Leads
Package Name	UFM
Power Dissipation (Max)	500 mW
Qualification	AEC-Q101
Rds On (Max)	25.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	6 V
Vgs(th) (Max)	1 V

SSM3J140TU Series

Part	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature	FET Type	Technology	Qualification	Grade	Package / Case	Mounting Type	Vgs (Max) Positive	Vgs (Max) Negative	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Gate Charge (Max)	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM3J140TU,LXHF	1 V	1800 pF	150 °C	P-Channel	MOSFET (Metal Oxide)	AEC-Q101	Automotive	3-SMD Flat Leads	Surface Mount	6 V	-8 V	4.5 V	1.5 V	UFM	24.8 nC	4.4 A	500 mW	25.8 mOhm	20 V
Toshiba Semiconductor and Storage SSM3J140TU,LF	1 V	1800 pF	150 °C	P-Channel	MOSFET (Metal Oxide)			3-SMD Flat Leads	Surface Mount	6 V	-8 V	4.5 V	1.5 V	UFM	24.8 nC	4.4 A	500 mW	25.8 mOhm	20 V

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