MOSFET P-CH 20V 4.4A UFM
| Part | Supplier Device Package | Rds On (Max) @ Id, Vgs | Vgs (Max) [Max] | Vgs (Max) [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature | Power Dissipation (Max) [Max] | Vgs(th) (Max) @ Id | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Technology | Drain to Source Voltage (Vdss) | FET Type | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | UFM | 25.8 mOhm | 6 V | -8 V | 24.8 nC | 150 °C | 500 mW | 1 V | Surface Mount | 1800 pF | 4.4 A | MOSFET (Metal Oxide) | 20 V | P-Channel | 1.5 V 4.5 V |