1N4448 TR

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 100V 150MA DO35

Search across all available documentation for this part.

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 100V 150MA DO35

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	1N4448 TR	1N4448 Series

Capacitance @ Vr, F	4 pF	4 pF
Current - Average Rectified (Io)	150 mA	150 mA
Current - Reverse Leakage @ Vr	25 nA	25 nA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	200 C	200 C
Operating Temperature - Junction [Min]	-65 C	-65 C
Package / Case	Axial, DO-35, DO-204AH	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	4 ns	4 ns
Speed	Any Speed	Any Speed
Speed	200 mA	200 mA
Supplier Device Package	DO-35	DO-35
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V	100 V
Voltage - Forward (Vf) (Max) @ If	720 mV	720 mV

DIODE GEN PURP 100V 150MA DO35

Part	Capacitance @ Vr, F	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Speed	Speed	Current - Average Rectified (Io)
Central Semiconductor Corp 1N4448 BK	4 pF	DO-35	200 C	-65 C	Through Hole	4 ns	100 V	Standard	Axial, DO-204AH, DO-35	720 mV	25 nA	Any Speed	200 mA	150 mA
Central Semiconductor Corp 1N4448 TR	4 pF	DO-35	200 C	-65 C	Through Hole	4 ns	100 V	Standard	Axial, DO-204AH, DO-35	720 mV	25 nA	Any Speed	200 mA	150 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 100 V 150mA Through Hole DO-35

Technical documentation and resources