1N4448 BK

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 100V 150MA DO35

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Obsolete

Central Semiconductor Corp

DIODE GEN PURP 100V 150MA DO35

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General part information

Diode 100 V 150mA Through Hole DO-35

Technical documentation and resources

Specification	1N4448 BK	1N4448 Series

Capacitance @ Vr, F	4 pF	4 pF
Current - Average Rectified (Io)	150 mA	150 mA
Current - Reverse Leakage @ Vr	25 nA	25 nA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	200 C	200 C
Operating Temperature - Junction [Min]	-65 C	-65 C
Package / Case	Axial, DO-35, DO-204AH	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	4 ns	4 ns
Speed	Any Speed	Any Speed
Speed	200 mA	200 mA
Supplier Device Package	DO-35	DO-35
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V	100 V
Voltage - Forward (Vf) (Max) @ If	720 mV	720 mV

Part	Capacitance @ Vr, F	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Speed	Speed	Current - Average Rectified (Io)
Central Semiconductor Corp 1N4448 BK	4 pF	DO-35	200 C	-65 C	Through Hole	4 ns	100 V	Standard	Axial, DO-204AH, DO-35	720 mV	25 nA	Any Speed	200 mA	150 mA
Central Semiconductor Corp 1N4448 TR	4 pF	DO-35	200 C	-65 C	Through Hole	4 ns	100 V	Standard	Axial, DO-204AH, DO-35	720 mV	25 nA	Any Speed	200 mA	150 mA