TW070J120B,S1Q

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Toshiba Semiconductor and Storage

SICFET N-CH 1200V 36A TO3P

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Toshiba Semiconductor and Storage

SICFET N-CH 1200V 36A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	TW070J120B,S1Q

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	67 nC
Input Capacitance (Ciss) (Max) @ Vds	1680 pF
Mounting Type	Through Hole
Operating Temperature [Max]	347 °F
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	272 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	TO-3P(N)
Vgs (Max)	25 V, -10 V
Vgs(th) (Max) @ Id	5.8 V

SICFET N-CH 1200V 36A TO3P

Part	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	FET Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage TW070J120B,S1Q	67 nC	90 mOhm	SC-65-3, TO-3P-3	36 A	5.8 V	1680 pF	TO-3P(N)	-10 V, 25 V	272 W	N-Channel	Through Hole	-55 °C	347 °F	1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	25	$ 20.40

General part information

N-Channel 1200 V 36A (Tc) 272W (Tc) Through Hole TO-3P(N)

Technical documentation and resources

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