SICFET N-CH 1200V 36A TO3P
| Part | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Package / Case | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Vgs (Max) | Power Dissipation (Max) | FET Type | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage TW070J120B,S1Q | 67 nC | 90 mOhm | SC-65-3, TO-3P-3 | 36 A | 5.8 V | 1680 pF | TO-3P(N) | -10 V, 25 V | 272 W | N-Channel | Through Hole | -55 °C | 347 °F | 1200 V |