SSM6J216FE,LF

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Toshiba Semiconductor and Storage

MOSFET P-CHANNEL 12V 4.8A ES6

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Toshiba Semiconductor and Storage

MOSFET P-CHANNEL 12V 4.8A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J216FE,LF

Current - Continuous Drain (Id) @ 25°C	4.8 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12.7 nC
Input Capacitance (Ciss) (Max) @ Vds	1040 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs [Max]	32 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Mounting Type	Operating Temperature	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]
Toshiba Semiconductor and Storage SSM6J216FE,LF	Surface Mount	150 °C	12 V	SOT-563 SOT-666	1.5 V 4.5 V	ES6	P-Channel	700 mW	1040 pF	12.7 nC	1 V	MOSFET (Metal Oxide)	8 V	4.8 A	32 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 12 V 4.8A (Ta) 700mW (Ta) Surface Mount ES6

Technical documentation and resources

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