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MOSFET P-CHANNEL 12V 4.8A ES6
| Part | Mounting Type | Operating Temperature | Drain to Source Voltage (Vdss) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Technology | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | Surface Mount | 150 °C | 12 V | SOT-563 SOT-666 | 1.5 V 4.5 V | ES6 | P-Channel | 700 mW | 1040 pF | 12.7 nC | 1 V | MOSFET (Metal Oxide) | 8 V | 4.8 A | 32 mOhm |